एपिटैक्सी हिंदी उपयोग और उदाहरण

"" इन यन्त्रों के साथ इलेक्ट्रॉन किरण अश्मलेखन और आणविक किरण एपिटैक्सी जैसे विधिओं के प्रयोग से नैनो-विन्यासों के प्रकलन से इस विज्ञान में उन्नति हुई।

इन यन्त्रों के साथ इलेक्ट्रॉन किरण अश्मलेखन और आणविक किरण एपिटैक्सी जैसे विधिओं के प्रयोग से नैनो-विन्यासों के प्रकलन से इस विज्ञान में उन्नति हुई।

एपिटैक्सी इसके अंग्रेजी अर्थ का उदाहरण

Smith graduated from Oxford with a metallurgy degree in 1965, and did postgraduate work in the Chemistry Department, where he used the field emission microscope and the field ion microscope to study the epitaxial growth of nickel on tungsten.

It is still a challenge to directly epitaxially grow 2D phosphorene because the stability of black phosphorene is highly sensitive to substrate, which is understanding by theoretical simulations.

It was introduced in the early 1960s by RCA using a hometaxial power transistor process, transitioned to an epitaxial base in the mid-1970s.

The exact performance characteristics depend on the manufacturer and date; before the move to the epitaxial base version in the mid-1970s the fT could be as low as 0.

5"nbsp;MHz (minimum) because some improvements have been made over time (especially the move to the epitaxial manufacturing process).

With changes to semiconductor manufacturing technology, the original process became economically uncompetitive in the mid-1970s, and a similar device was created using epitaxial base technology.

Although the original 2N3055 went into decline relative to epitaxial-base transistors because of high manufacturing costs, the epitaxial-base version continued to be used in both linear amplifiers and switching supplies.

An MJ2955 (PNP), which is also manufactured using the epitaxial process today, is a complementary transistor to the 2N3055.

In epitaxial growth, the lattice constant is a measure of the structural compatibility between different materials.

Lattice constant matching is important for the growth of thin layers of materials on other materials; when the constants differ, strains are introduced into the layer, which prevents epitaxial growth of thicker layers without defects.

ZnO nanowires are grown epitaxially on the substrate and assemble into monolayer arrays.

The duo started by setting up the epitaxial process at Santa Clara.

Crystal Truncation Rod (CTR) measurements allow detailed determination of atomic structure at the surface, especially useful in cases of oxidation, epitaxial growth, and adsorption studies on crystalline surfaces.